High-Speed, Large-Area, p-i-n InGaAs Photodiode Linear Array at 2-micron Wavelength (2012)

Abhay Joshi and Shubhashish Datta
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317

ABSTRACT

We present 16-element and 32-element lattice-mismatched InGaAs photodiode arrays having a cut-off wavelength of ~2.2 µm. Each 100 µm × 200 µm large pixel of the 32-element array has a capacitance of 2.5 pF at 5 V reverse bias, thereby allowing a RC-limited bandwidth of ~1.3 GHz. At room temperature, each pixel demonstrates a dark current of 25 µA at 5 V reverse bias. Corresponding results for the 16-element array having 200 µm × 200 µm pixels are also reported. Cooling the photodiode array to 150K is expected to reduce its dark current to < 50 nA per pixel at 5 V reverse bias. Additionally, measurement results of 2-micron single photodiodes having 16 GHz bandwidth and corresponding PIN-TIA photoreceiver having 6 GHz bandwidth are also reported.

* Proc. of SPIE Vol. 8353 83533D-1

Related links: High-Speed, Large-Area, p-i-n InGaAs Photodiode Linear Array at 2-micron Wavelength (SPIE)
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