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Shubhashish Datta, Abhay Joshi, Don Becker, and Roy Howard
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317
ABSTRACT
We report an InGaAs p-i-n photodiode with a power-to-phase conversion factor of 5.6rad/W at 2V peak RF amplitude at 1GHz frequency. In comparison, a PIN-TIA photoreceiver demonstrates 44rad/W phase linearity at 0.44V peak RF amplitude.
*OSA/OFC/NFOEC 2009.
