High Phase Linearity, High Power Handling, InGaAs Photodiodes for Precise Timing Applications (2009)

Shubhashish Datta, Abhay Joshi, Don Becker, and Roy Howard
Discovery Semiconductors, Inc.
119 Silvia Street
Ewing, NJ 08628, USA
Tel: 609-434-1311, Fax: 609-434-1317


We report an InGaAs p-i-n photodiode with a power-to-phase conversion factor of 5.6rad/W at 2V peak RF amplitude at 1GHz frequency. In comparison, a PIN-TIA photoreceiver demonstrates 44rad/W phase linearity at 0.44V peak RF amplitude.


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